International Journal of Electronic Devices and Networking
  • Printed Journal
  • Refereed Journal
  • Peer Reviewed Journal

P-ISSN: 2708-4477, E-ISSN: 2708-4485

International Journal of Electronic Devices and Networking


2022, Vol. 3, Issue 1, Part A
On increasing of density of field-effect heterotransistors in the framework of a C-multiplier. Influence of mismatch-induced stress and porosity of materials on technological process


Author(s): EL Pankratov

Abstract: In this paper we introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress. Based on this approach we analyzed possibility to increase density of field-effect transistors framework a C-multiplier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure.

Pages: 12-22 | Views: 465 | Downloads: 158

Download Full Article: Click Here
How to cite this article:
EL Pankratov. On increasing of density of field-effect heterotransistors in the framework of a C-multiplier. Influence of mismatch-induced stress and porosity of materials on technological process. Int J Electron Devices Networking 2022;3(1):12-22.
International Journal of Electronic Devices and Networking

International Journal of Electronic Devices and Networking

International Journal of Electronic Devices and Networking
Call for book chapter