International Journal of Electronic Devices and Networking
2022, Vol. 3, Issue 1, Part A
On approach to increase integration rate of elements of a common-gate 4th-order filter pseudo-differential scheme
Author(s): EL Pankratov
Abstract: In this paper we introduce an approach to increase integration rate of elements of a common-gate 4th-order filter pseudo-differential scheme. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
Pages: 104-111 | Views: 435 | Downloads: 141
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How to cite this article:
EL Pankratov. On approach to increase integration rate of elements of a common-gate 4th-order filter pseudo-differential scheme. Int J Electron Devices Networking 2022;3(1):104-111.
