International Journal of Electronic Devices and Networking
2022, Vol. 3, Issue 2, Part A
On approach to optimize manufacturing of field-effect heterotransistors in the framework of a modified series-shunt field-effect switch to increase their integration rate: Influence mismatch-induced stress
Author(s): EL Pankratov
Abstract: In this paper we introduce an approach to increase density of field-effect transistors in the framework a modified series-shunt field-effect switch. In the framework of the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
Pages: 51-74 | Views: 316 | Downloads: 125
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How to cite this article:
EL Pankratov. On approach to optimize manufacturing of field-effect heterotransistors in the framework of a modified series-shunt field-effect switch to increase their integration rate: Influence mismatch-induced stress. Int J Electron Devices Networking 2022;3(2):51-74.