International Journal of Electronic Devices and Networking
2025, Vol. 6, Issue 1, Part A
Temperature and noise analysis of BiCMOS: Based RF circuits
Author(s): James Chisale, Monica Gondwe and Chikondi Banda
Abstract: BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor) technology has gained prominence in RF circuit design due to its combined advantages of bipolar transistors and CMOS devices. However, temperature variations and noise performance critically influence the efficiency and reliability of BiCMOS-based RF circuits. This review paper explores the impact of temperature fluctuations on BiCMOS circuits, emphasizing thermal noise, phase noise, and overall signal integrity. Furthermore, it discusses noise sources in BiCMOS RF circuits, including flicker noise, shot noise, and thermal noise, along with mitigation strategies. The study aims to provide a comprehensive understanding of temperature and noise considerations in BiCMOS-based RF circuits, leading to optimized circuit design and improved performance in modern communication systems.
DOI: 10.22271/27084477.2025.v6.i1a.68
Pages: 01-06 | Views: 61 | Downloads: 21
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How to cite this article:
James Chisale, Monica Gondwe, Chikondi Banda. Temperature and noise analysis of BiCMOS: Based RF circuits. Int J Electron Devices Networking 2025;6(1):01-06. DOI: 10.22271/27084477.2025.v6.i1a.68
