International Journal of Electronic Devices and Networking
2025, Vol. 6, Issue 1, Part A
Enhancing RF and analog circuit performance with BiCMOS semiconductor technology
Author(s): Camilla Läckberg and Stieg Lagerlöf
Abstract: BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor) technology has emerged as a superior alternative to conventional CMOS in enhancing the performance of RF and analog circuits. This study investigates the advantages of BiCMOS technology over CMOS, focusing on key performance metrics such as cutoff frequency, maximum oscillation frequency, gain, noise figure, and power efficiency. A comparative analysis was conducted using prototype circuits fabricated on 130 nm and 90 nm SiGe BiCMOS process nodes, with circuit evaluation performed using Cadence Virtuoso and Keysight ADS simulations, followed by experimental validation through high-frequency probe stations and vector network analyzers. The results indicate statistically significant improvements in BiCMOS-based circuits across all key parameters (p < 0.01 for most comparisons). The cutoff frequency for BiCMOS circuits averaged 282.5 GHz, significantly higher than the 212.5 GHz observed in CMOS circuits. Similarly, the maximum oscillation frequency improved from 282.5 GHz (CMOS) to 357.5 GHz (BiCMOS), demonstrating superior high-frequency performance. The gain was also enhanced (18.27 dB for BiCMOS vs. 14.5 dB for CMOS, p< 0.05), while the noise figure was reduced to 1.2 dB in BiCMOS compared to 2.0 dB in CMOS. Furthermore, power efficiency increased to 56.5% in BiCMOS, reinforcing its suitability for low-power, high-performance RF applications. Despite these advantages, BiCMOS fabrication complexity and cost remain challenges. This study suggests integrating BiCMOS with emerging nanoscale technologies such as FinFET and SOI, along with AI-driven circuit optimization, to address these limitations. The findings highlight BiCMOS technology as a key enabler for 5G networks, automotive radar, satellite communications, and advanced mixed-signal applications, ensuring long-term innovation in RF and analog circuit design.
DOI: 10.22271/27084477.2025.v6.i1a.69
Pages: 07-10 | Views: 66 | Downloads: 19
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How to cite this article:
Camilla Läckberg, Stieg Lagerlöf. Enhancing RF and analog circuit performance with BiCMOS semiconductor technology. Int J Electron Devices Networking 2025;6(1):07-10. DOI: 10.22271/27084477.2025.v6.i1a.69
