International Journal of Electronic Devices and Networking
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P-ISSN: 2708-4477, E-ISSN: 2708-4485

International Journal of Electronic Devices and Networking


2022, Vol. 3, Issue 1, Part A
On influence of missmatch-induced stress and porosity of materials on manufacturing of a quadrature relaxation oscillator based on heterostructures to increase density of their elements


Author(s): EL Pankratov

Abstract: In this paper we introduce an approach to increase density of field-effect transistors in the framework of a quadrature relaxation oscillator. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Pages: 74-93 | Views: 493 | Downloads: 152

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International Journal of Electronic Devices and Networking
How to cite this article:
EL Pankratov. On influence of missmatch-induced stress and porosity of materials on manufacturing of a quadrature relaxation oscillator based on heterostructures to increase density of their elements. Int J Electron Devices Networking 2022;3(1):74-93.
International Journal of Electronic Devices and Networking
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