International Journal of Electronic Devices and Networking
  • Printed Journal
  • Refereed Journal
  • Peer Reviewed Journal

P-ISSN: 2708-4477, E-ISSN: 2708-4485

International Journal of Electronic Devices and Networking


2022, Vol. 3, Issue 1, Part A
S. No. Title and Authors Name
1
An approach to optimize manufacturing of a compact transimpedance amplifier based on heterostructures to increase density of their elements. Influence of mismatch induced stress and porosity of materials on technological process
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 01-11
Abstract  |  Download  |  Country: Russia  |  File Size: 484 KB  |  Views: 405   Downloads: 173
2
On increasing of density of field-effect heterotransistors in the framework of a C-multiplier. Influence of mismatch-induced stress and porosity of materials on technological process
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 12-22
Abstract  |  Download  |  Country: Russia  |  File Size: 504 KB  |  Views: 258   Downloads: 82
3
An approach to optimize manufacturing of an operational amplifier based on heterostructures to increase density of their elements: Influence of missmatch-induced stress
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 23-46
Abstract  |  Download  |  Country: Russia  |  File Size: 851 KB  |  Views: 250   Downloads: 82
4
On analytical approach for optimization of manufacturing of a relaxation oscillator with a single current source based on heterostructures to increase density of their elements with account missmatch-induced stress and porosity of materials
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 47-73
Abstract  |  Download  |  Country: Russia  |  File Size: 898 KB  |  Views: 230   Downloads: 74
5
On influence of missmatch-induced stress and porosity of materials on manufacturing of a quadrature relaxation oscillator based on heterostructures to increase density of their elements
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 74-93
Abstract  |  Download  |  Country: Russia  |  File Size: 1671 KB  |  Views: 224   Downloads: 64
6
On approach to increase integration rate of elements of a fully-balanced differential difference amplifier
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 94-103
Abstract  |  Download  |  Country: Russia  |  File Size: 822 KB  |  Views: 262   Downloads: 115
7
On approach to increase integration rate of elements of a common-gate 4th-order filter pseudo-differential scheme
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 104-111
Abstract  |  Download  |  Country: Russia  |  File Size: 822 KB  |  Views: 197   Downloads: 60
8
On optimization of manufacturing of a instrumentation amplifier based on heterostructures to increase density of their elements: Influence of mismatch-induced stress and porosity of materials on technological process
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 112-138
Abstract  |  Download  |  Country: Russia  |  File Size: 943 KB  |  Views: 172   Downloads: 65
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