International Journal of Electronic Devices and Networking
  • Printed Journal
  • Refereed Journal
  • Peer Reviewed Journal

P-ISSN: 2708-4477, E-ISSN: 2708-4485
Peer Reviewed Journal

International Journal of Electronic Devices and Networking


2022, Vol. 3, Issue 1, Part A
S. No. Title and Authors Name
1
An approach to optimize manufacturing of a compact transimpedance amplifier based on heterostructures to increase density of their elements. Influence of mismatch induced stress and porosity of materials on technological process
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 01-11
Abstract  |  Download  |  Country: Russia  |  File Size: 224 KB  |  Views: 1204   Downloads: 485
2
On increasing of density of field-effect heterotransistors in the framework of a C-multiplier. Influence of mismatch-induced stress and porosity of materials on technological process
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 12-22
Abstract  |  Download  |  Country: Russia  |  File Size: 249 KB  |  Views: 975   Downloads: 302
3
An approach to optimize manufacturing of an operational amplifier based on heterostructures to increase density of their elements: Influence of missmatch-induced stress
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 23-46
Abstract  |  Download  |  Country: Russia  |  File Size: 444 KB  |  Views: 883   Downloads: 304
4
On analytical approach for optimization of manufacturing of a relaxation oscillator with a single current source based on heterostructures to increase density of their elements with account missmatch-induced stress and porosity of materials
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 47-73
Abstract  |  Download  |  Country: Russia  |  File Size: 494 KB  |  Views: 894   Downloads: 289
5
On influence of missmatch-induced stress and porosity of materials on manufacturing of a quadrature relaxation oscillator based on heterostructures to increase density of their elements
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 74-93
Abstract  |  Download  |  Country: Russia  |  File Size: 1144 KB  |  Views: 872   Downloads: 260
6
On approach to increase integration rate of elements of a fully-balanced differential difference amplifier
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 94-103
Abstract  |  Download  |  Country: Russia  |  File Size: 353 KB  |  Views: 997   Downloads: 413
7
On approach to increase integration rate of elements of a common-gate 4th-order filter pseudo-differential scheme
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 104-111
Abstract  |  Download  |  Country: Russia  |  File Size: 363 KB  |  Views: 837   Downloads: 243
8
On optimization of manufacturing of a instrumentation amplifier based on heterostructures to increase density of their elements: Influence of mismatch-induced stress and porosity of materials on technological process
EL Pankratov
Int. J. Electron. Devices Networking, 2022; 3(1): 112-138
Abstract  |  Download  |  Country: Russia  |  File Size: 515 KB  |  Views: 792   Downloads: 275
9
PUF for device authentication in multi-hop body area networks
Fares and Goswami
Int. J. Electron. Devices Networking, 2022; 3(1): 139-145
Abstract  |  Download  |  Country: India  |  File Size: 454 KB  |  Views: 181   Downloads: 58
International Journal of Electronic Devices and Networking
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