International Journal of Electronic Devices and Networking
2022, Vol. 3, Issue 1, Part A
| Title and Authors Name |
|---|
An approach to optimize manufacturing of a compact transimpedance amplifier based on heterostructures to increase density of their elements. Influence of mismatch induced stress and porosity of materials on technological process EL Pankratov Int. J. Electron. Devices Networking, 2022; 3(1): 01-11 |
On increasing of density of field-effect heterotransistors in the framework of a C-multiplier. Influence of mismatch-induced stress and porosity of materials on technological process EL Pankratov Int. J. Electron. Devices Networking, 2022; 3(1): 12-22 |
An approach to optimize manufacturing of an operational amplifier based on heterostructures to increase density of their elements: Influence of missmatch-induced stress EL Pankratov Int. J. Electron. Devices Networking, 2022; 3(1): 23-46 |
On analytical approach for optimization of manufacturing of a relaxation oscillator with a single current source based on heterostructures to increase density of their elements with account missmatch-induced stress and porosity of materials EL Pankratov Int. J. Electron. Devices Networking, 2022; 3(1): 47-73 |
On influence of missmatch-induced stress and porosity of materials on manufacturing of a quadrature relaxation oscillator based on heterostructures to increase density of their elements EL Pankratov Int. J. Electron. Devices Networking, 2022; 3(1): 74-93 |
On approach to increase integration rate of elements of a fully-balanced differential difference amplifier EL Pankratov Int. J. Electron. Devices Networking, 2022; 3(1): 94-103 |
On approach to increase integration rate of elements of a common-gate 4th-order filter pseudo-differential scheme EL Pankratov Int. J. Electron. Devices Networking, 2022; 3(1): 104-111 |
On optimization of manufacturing of a instrumentation amplifier based on heterostructures to increase density of their elements: Influence of mismatch-induced stress and porosity of materials on technological process EL Pankratov Int. J. Electron. Devices Networking, 2022; 3(1): 112-138 |
